| 磁控溅射生长SiC薄膜的拉曼光谱研究 |
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| 引用本文： | 毛旭,陈长青,周祯来,杨宇,吴兴惠. 磁控溅射生长SiC薄膜的拉曼光谱研究[J]. 电子元件与材料, 2005, 24(8): 20-22 |
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| 作者姓名： | 毛旭 陈长青 周祯来 杨宇 吴兴惠 |
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| 作者单位： | 1. 云南大学化学与材料工程学院材料系,云南,昆明,650091;北京信息工程学院传感技术研究中心,北京,100101
2. 云南大学化学与材料工程学院材料系,云南,昆明,650091 |
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| 摘 要： | 用射频磁控溅射法在Si(100)和玻璃衬底上制备出衬底温度分别为300,450,600℃的碳化硅薄膜,并对薄膜进行了拉曼光谱和原子力显微镜测试分析。结果表明,用溅射法在玻璃衬底上生长出微晶SiC(μc-SiC)薄膜和在Si(100)衬底上生长出立方碳化硅(β-SiC)薄膜。并且薄膜材料的结晶度随着衬底温度的升高而改善。
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| 关 键 词： | 半导体技术 SiC薄膜 μc-SiC 磁控溅射 拉曼光谱 |
| 文章编号： | 1001-2028(2005)08-0020-03 |
Raman Spectra Study on SiC Thin Films by Magnetron Sputtering |
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| MAO Xu,CHEN Chang-qing,ZHOU Zhen-lai,YANG Yu,WU Xing-hui. Raman Spectra Study on SiC Thin Films by Magnetron Sputtering[J]. Electronic Components & Materials, 2005, 24(8): 20-22 |
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| Authors: | MAO Xu CHEN Chang-qing ZHOU Zhen-lai YANG Yu WU Xing-hui |
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| Abstract: | The SiC thin films were grown on Si(100) and glass of temperature 300,450,600℃ by magnetron sputtering. The SiC thin Films were analysised by Raman spectra and AFM. The results show that the β-SiC films are grown on Si(100) of 600℃ and the μc-SiC films are grown on glass by magnetron sputtering. The crystalline of the films is improved by increasing the temperature of the substrate. |
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| Keywords: | semiconductor technology SiC thin films μc-SiC magnetron sputtering Raman spectra |
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