| MOCVD方法在Si衬底上低温生长ZnO薄膜 |
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| 引用本文： | 沈文娟,王俊,王启元,段垚,曾一平.MOCVD方法在Si衬底上低温生长ZnO薄膜[J].功能材料与器件学报,2006,12(1):63-66. |
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| 作者姓名： | 沈文娟 王俊 王启元 段垚 曾一平 |
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| 作者单位： | 中国科学院半导体所材料中心,北京,100083 |
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| 摘 要： | 采用二乙基锌(DEZn)和氧化亚氮(N2O)作为锌源和氧源,在低温300℃,利用金属有机化学气相沉积(MOCVD)的方法在Si(100)衬底上制备了ZnO薄膜.通过优化氧锌比,ZnO薄膜为高度单一c轴方向生长.由光致发光谱和反射谱得知,ZnO薄膜的紫外发光峰位于388nm,具有很好的光透性,且其PL谱半峰宽为80meV.
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| 关 键 词： | 金属有机化学气相沉积 光致发光 ZnO metal-organic chemical vapor deposition photoluminescence ZnO |
| 文章编号： | 1007-4252（2006）01-0063-04 |
| 收稿时间： | 2005-04-04 |
| 修稿时间： | 2005-06-14 |
Low -temperature preparation of ZnO films on Si substrates by MOCVD |
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| SHEN Wen-juan,WANG Jun,WANG Qi-yuan,DUAN Yao,ZENG Yi-ping.Low -temperature preparation of ZnO films on Si substrates by MOCVD[J].Journal of Functional Materials and Devices,2006,12(1):63-66. |
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| Authors: | SHEN Wen-juan WANG Jun WANG Qi-yuan DUAN Yao ZENG Yi-ping |
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| Affiliation: | Materials Center, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China |
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| Abstract: | ZnO films were deposited on Si(100) substrates at 300℃ by metal -organic chemical vapor deposition(MOGVD). The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2:1. And in this optimum growth condition, X - ray diffraction (XRD) and scanning probe morphology (SPM) images indicate that the films grow along the c -axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm..And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence (PL) spectrum shows only strong near- band -edge emissions with little or no deep -level emission related to defects. The full - width at half - maximum (FWHM) of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained. |
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| Keywords: | metal-organic chemical vapor deposition photoluminescence ZnO |
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