Thermionic emission model for contact resistance in organic field-effect transistor |
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Authors: | Martin Weis Motoharu Nakao Jack Lin Takaaki Manaka Mitsumasa Iwamoto |
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Affiliation: | aDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan |
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Abstract: | Injection mechanism of top-contact pentacene field-effect transistor (OFET) was investigated in respect to the internal field. The contact resistance was evaluated by the transmission line method for various applied external voltages as well as various pentacene film thicknesses. The behaviour of contact resistance was described in terms of the thermionic emission model (Schottky injection) and internal electric field generated by excess charges accumulated on pentacene–gate insulator interface. It was shown that pentacene film thickness changes the internal electric field affecting the carrier injection barrier. It was concluded that the space-charge field effect made a significant contribution for smaller pentacene film thicknesses and therefore in accordance to the thermionic model was able to decrease contact resistance representing the potential drop. |
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Keywords: | Organic field-effect transistor Contact resistance Thermionic emission model |
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