GaAs structures with a gate dielectric based on aluminum-oxide layers |
| |
Authors: | I L Kalentyeva O V Vikhrova A V Zdoroveyshchev Yu A Danilov A V Kudrin |
| |
Abstract: | Different types of dielectrics obtained by low-temperature electron-beam sputtering are studied; these dielectrics include Al2O3 layers and Al2O3/SiO2/Al2O3 three-layer compositions. The dependence of the electrical strength of Al2O3 layers on their thickness is determined. It is established that formation of the three-layer dielectric Al2O3/SiO2/Al2O3 makes it possible to increase the range of operating voltages up to 60 V for structures with a gate electrode. It is shown that it is possible to control the density of charge carriers (holes) in the two-dimensional conduction channel of GaAs structures by changing the gate voltage when the Al2O3/SiO2/Al2O3 structure is used as a gate dielectric. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |