Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
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Authors: | I A Aleksandrov K S Zhuravlev V G Mansurov |
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Abstract: | The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix. |
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