Li掺杂对ZnO薄膜发光特性的影响 |
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引用本文: | 邱文旭,韩娟,张雄藩.Li掺杂对ZnO薄膜发光特性的影响[J].西安工业大学学报,2011(4):349-351,359. |
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作者姓名: | 邱文旭 韩娟 张雄藩 |
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作者单位: | 西安工业大学北方信息工程学院,西安710025 |
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摘 要: | 为研究碱金属Li掺杂ZnO薄膜的结构及光学性能,利用射频磁控溅射法(RF)在si基片上制备ZnO薄膜和Zn1-LixO薄膜,通过x射线衍射、原子力显微镜和光致发光对薄膜进行测试.研究结果表明:基片温度为450℃时,(002)峰成为薄膜的主要衍射峰;掺入碱金属Li后,薄膜表面颗粒依然均匀;Li掺杂量在5%~15%变化时,带间跃迁峰发生明显红移现象,各发光峰的强度呈抛物线形式变化.
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关 键 词: | 磁控溅射 Zn1-xLixO薄膜 光致发光 紫外峰 |
Effect of Li-doping on Optical Properties of Zn1-xLixO Thin Films |
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Affiliation: | QIU Wen-xu , HAN Juan, ZHANG X iong- fan(School of North Institute of Information Engineering, Xi' an Technological University, Xi' an 710025, China) |
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Abstract: | Zn1-x LixO thin films of different doping proportion were grown on Si substrates with the magnetron sputtering method, and X-ray diffraction(XRD), an atom force microscope (AFM) and photolurninescence (PL) were employed to study their structure, morphology and luminescence. The result indicates that the films have clear (002) peaks when the temperature is at 450℃ ,that Li-doping has not changed the surface of ZnO thin film significantly,and that the red shift of inter-band transition peak along with increasing proportion of Li-doping. The change in theamount has a strong influence on the intensitv of the peak. |
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Keywords: | magnetron sputtering method Zn1-xLixO thin films PL spectrum ultraviolct peak |
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