射频磁控溅射法制备MoS2/SiC双层薄膜

采用射频磁控溅射法在室温、500℃的单晶硅和GCr15钢基体上制备了MoS2/SiC双层薄膜,并借助X射线衍射仪、扫描电子显微镜、摩擦磨损试验机以及划痕仪等研究了薄膜的结构、形貌、成分、摩擦学性能以及薄膜与基体的结合力。结果表明:当衬底温度为500℃时制备的MoS2/SiC双层薄膜表面致密平整,两层薄膜之间界面平直,膜厚约为0.8μm;该双层膜的摩擦因数低,耐磨性好;添加中间层可提高薄膜与基体的结合力。

MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering

The MoS2/SiC double films were prepared on single crystal silicon and GCr15 steel substrate,which temperature was room temperature and 500 ℃,by radio frequency magnetron sputtering method.The structure,morphology,components,tribological properties of the films and cohesion between film and substrate were studied by X-ray diffraction,scanning electron microscopy,friction and wear tester and scratch tester,respectively.The results show that the surface of MoS2/SiC double film prepared at substrate temperature of 500 ℃ was compact and flat,and the interface of two layer films was straight.The film exhibited excellent wear resistance and low friction coefficient.Adding interlayers could improve the cohesion between substrate and MoS2/SiC film.