A new 50-nm nMOSFET with side-gates for virtual source-drain extensions |
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Authors: | Young Jin Choi Byung Yong Choi Kyung Rok Kim Jong duk Lee Byung-Gook Park |
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Affiliation: | Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ.; |
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Abstract: | We have proposed and fabricated a novel 50-nm nMOSFET with side-gates, which induce inversion layers for virtual source/drain extensions (SDE). The 50-nm nMOSFETs show excellent suppression of the short channel effect and reasonable current drivability subthreshold swing of 86 mV/decade, drain-induced barrier lowering (DIBL) of 112 mV, and maximum transconductance (g/sub m/) of 470 /spl mu/S//spl mu/m at V/sub D/=1.5 V], resulting from the ultra-shallow virtual SDE junction. Since both the main gate and the side-gate give good cut-off characteristics, a possible advantage of this structure in an application to multi-input NAND gates was investigated. |
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