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In2O3纳米线制备及其特性
引用本文:谢自力,张荣,高超,刘斌,李亮,修向前,朱顺明,顾书林,韩平,江若琏,施毅,郑有炓.In2O3纳米线制备及其特性[J].半导体学报,2006,27(3):536-540.
作者姓名:谢自力  张荣  高超  刘斌  李亮  修向前  朱顺明  顾书林  韩平  江若琏  施毅  郑有炓
作者单位:南京大学物理系,江苏省光电功能材料重点实验室,南京 210093;南京大学物理系,江苏省光电功能材料重点实验室,南京 210094;南京大学物理系,江苏省光电功能材料重点实验室,南京 210095;南京大学物理系,江苏省光电功能材料重点实验室,南京 210096;南京大学物理系,江苏省光电功能材料重点实验室,南京 210097;南京大学物理系,江苏省光电功能材料重点实验室,南京 210098;南京大学物理系,江苏省光电功能材料重点实验室,南京 210099;南京大学物理系,江苏省光电功能材料重点实验室,南京 210100;南京大学物理系,江苏省光电功能材料重点实验室,南京 210101;南京大学物理系,江苏省光电功能材料重点实验室,南京 210102;南京大学物理系,江苏省光电功能材料重点实验室,南京 210103;南京大学物理系,江苏省光电功能材料重点实验室,南京 210104
基金项目:科技部科研项目 , 国家科技攻关项目 , 中国科学院资助项目 , 国家重点基础研究发展计划(973计划) , 江苏省自然科学基金
摘    要:使用管式加热炉成功地制备出In2O3纳米线.通过扫描电子显微镜可以看到样品为In2O3纳米线;X射线衍射分析证实该材料是立方结构的In2O3;X射线光电子谱分析发现该In2O3中存在大量氧缺陷;光致发光谱研究显示制得的In2O3纳米线有比较强的发光现象,主要集中在紫外光谱区.同时对反应的气相-固相(V-S)生长机理和In2O3的光致发光机理进行了详细分析.

关 键 词:In2Oa  纳米线  X射线衍射  扫描电子显微镜  纳米线制备  特性  Nanowires  Characteristics  谱分析  发光机理  生长机理  固相  反应  紫外光谱  光现象  比较  显示  光谱研究  氧缺陷  存在  发现  光电子  立方结构  材料
文章编号:0253-4177(2006)03-0536-05
收稿时间:08 28 2005 12:00AM
修稿时间:10 12 2005 12:00AM

Fabrication and Characteristics of In2O3 Nanowires
Xie Zili,Zhang Rong,Gao Chao,Liu Bin,Li Liang,Xiu Xiangqian,Zhu Shunming,Gu Shulin,Han Ping,Jiang Ruolian,Shi Yi and Zheng Youdou.Fabrication and Characteristics of In2O3 Nanowires[J].Chinese Journal of Semiconductors,2006,27(3):536-540.
Authors:Xie Zili  Zhang Rong  Gao Chao  Liu Bin  Li Liang  Xiu Xiangqian  Zhu Shunming  Gu Shulin  Han Ping  Jiang Ruolian  Shi Yi and Zheng Youdou
Affiliation:Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210094, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210095, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210096, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210097, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210098, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210099, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210100, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210101, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210102, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210103, China;Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province,Department of Physics, Nanjing University, Nanjing 210104, China
Abstract:In2O3 nanowires are fabricated successfully with a high temperature tube furnace.SEM photos show the formation of the nanowires.XRD analyses indicate that the In2O3 nanowires are cubic crystals.XPS analyses indicate that there are many oxygen defects in the In2O3 nanowires.The In2O3 nanowires can emit very bright ultraviolet light at 396nm,which is detected by PL.The emission and reaction mechanisms are discussed in detail at last.
Keywords:In2O3  nanowires  XRD  SEM
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