首页 | 本学科首页   官方微博 | 高级检索  
     

本征和Al3+掺杂ZnO薄膜的特性研究
引用本文:宋立媛,唐利斌,姬荣斌,刘新近,陈雪梅,薛经纬,庄继胜,王茺,杨宇. 本征和Al3+掺杂ZnO薄膜的特性研究[J]. 红外技术, 2012, 34(5): 256-259
作者姓名:宋立媛  唐利斌  姬荣斌  刘新近  陈雪梅  薛经纬  庄继胜  王茺  杨宇
作者单位:1. 云南大学工程技术研究院,光电信息材料研究所,昆明650091;昆明物理研究所,云南昆明650223
2. 昆明物理研究所,云南昆明,650223
3. 云南大学工程技术研究院,光电信息材料研究所,昆明650091
基金项目:国家自然科学基金,兵器支撑项目资助
摘    要:采用溶胶-凝胶方法在载玻片衬底上制备了本征及不同Al3+掺杂浓度的ZnO:Al薄膜,利用X射线衍射(XRD)、原子力显微镜,紫外-可见光吸收光谱及霍尔效应研究了Al3+掺杂浓度对ZnO:Al薄膜结构和光电性能的影响。结果显示,ZnO:Al薄膜为六角纤锌矿晶体结构,具有很高的沿c轴的(002)择优取向,Al3+掺杂并没有改变ZnO的晶体结构,只是Al取代了Zn;掺杂前后薄膜样品均在ZnO带边吸收的位置有较强的吸收而在可见光范围吸收较小;并且当Al3+掺杂浓度为1.5%(摩尔百分比)时所获得的ZnO:Al薄膜具有最小的电阻率,为26Ωcm。

关 键 词:ZnO:Al薄膜  X射线衍射  紫外-可见光吸收光谱  霍尔效应
收稿时间:2012-01-20

Properties of Intrinsic and Aluminum-doped ZnO Thin Films
SONG Li-yuan , TANG Li-bin , JI Rong-bin , LIU Xin-jin , CHEN Xue-mei , XUE Jing-wei , ZHUANG Ji-sheng , WANG Chong , YANG Yu. Properties of Intrinsic and Aluminum-doped ZnO Thin Films[J]. Infrared Technology, 2012, 34(5): 256-259
Authors:SONG Li-yuan    TANG Li-bin    JI Rong-bin    LIU Xin-jin    CHEN Xue-mei    XUE Jing-wei    ZHUANG Ji-sheng    WANG Chong    YANG Yu
Affiliation:1(1.Institute for Optoelectronic Materials,School of Engineering & Technique,Yunnan University,Kunming 650091,China; 2.Kunming Institute of Physics,Kunming 650223,China)
Abstract:ZnO:Al thin films were prepared on the glass substrates by Sol-Gel method. The effects of Al3+dopant concentration on the structural, optical and electrical properties of ZnO:Al films were studied by X-ray diffraction, AFM, UV-Vis absorption spectrum and Hall effect. The results indicated that the ZnO:Al thin films have a preferred c-axis (002) orientation perpendicular to the substrates, it seems that no effect on the crystal structure with adding various Al3+ dopant concentrations. The thin films still have the high visible transmittance. It was observed that 1.5 atm.% Al3+ dopant concentration of ZnO:Al film makes the film to achieve the minimum resistivity.
Keywords:Key words:ZnO:Al thin films,XRD,UV-Vis Absorption spectrum,electrical properties
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号