InGaAs短波红外探测器研究进展

InxGa1 -xAs材料属于Ⅲ-Ⅴ族化合物半导体合金材料,随In组分含量的不同,其光谱响应的截止波长可在0.87～3.5 μm范围内变化,并具有高量子效率,加之成熟的MBE和MOVCD材料生长方式,很容易获得大面积高质量的外延材料,InGaAs材料因此成为一种重要的短波红外探测材料.InGaAs探测器可以在室温或近室温下工作,且具有较高的灵敏度和探测率,是小型化、低成本和高可靠性的短波红外探测系统的最佳选择,因此InGaAs短波红外探测器获得了飞速的发展和广泛的应用.同时对国内外InGaAs焦平面探测器发展状况和趋势进行了介绍.

Development Progress of InGaAs Short-wave Infrared Focal Plane Arrays

As the cut-off wavelength of spectral response of the Ⅲ-Ⅴ semiconductor alloy material, InxGa1－xAs can be changed from 0.87 to 3.5 μm by tuning the relative amount of Indium in the alloy. Besides, with high quantum efficiency, as well as mature MBE and MOVCD material growth technology, it is easy to gain large area and high-quality epitaxial materials. Therefore InGaAs become an important SWIR detector materials. InGaAs detector can work at room temperature with higher sensitivity and detectivity. So it is one of the best choices for miniature, low-cost and high-reliable SWIR detection system. The results of analysis and comparison provide guidance for rapid development of InGaAs short-wave infrared detectors. So InGaAs detectors obtain a rapid development and wide applications. At the same time, the status and development trends of the InGaAs infrared focal plane arrays(FPAs) domestic and abroad are introduced.