| 一种高性能BiCMOS带隙基准电压源设计 |
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| 引用本文： | 汪西川,杭贵周.一种高性能BiCMOS带隙基准电压源设计[J].仪表技术,2009(3):66-68. |
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| 作者姓名： | 汪西川 杭贵周 |
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| 作者单位： | 1. 上海大学机电工程与自动化学院,上海,200072;上海大学,微电子研究与开发中心,上海,200072
2. 上海大学机电工程与自动化学院,上海,200072 |
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| 摘 要： | 文章在对带隙基准基本原理与电路结构分析基础上，介绍了一种高精度、低功耗、高电源抑制比的BiCMOS带隙基准电压源电路。该电路的实现是基于0．6μm、5V的BiCMOS工艺。仿真结果表明，该基准电路稳定工作电源电压范围为1．9V～6．4V，在低频下的电源抑制比可达到-88dB，温度变化范围从-25℃至150℃时，温度系数为9．73×10^-6，输出电压误差为1．72mV。
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| 关 键 词： | 带隙基准 BiCMOS 电源抑制比 |
Design of a BiCMOS Bandgap Reference Voltage Source with High Performance |
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| WANG Xi-chuan,HANG Gui-zhou.Design of a BiCMOS Bandgap Reference Voltage Source with High Performance[J].Instrumentation Technology,2009(3):66-68. |
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| Authors: | WANG Xi-chuan HANG Gui-zhou |
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| Affiliation: | WANG Xi-chuan, HANG Gui-zhou (1. College of Mechatronic and Automation, Shanghai Univ., Shanghai 200072, China; 2. Micro-electronic R＆D Center, Shanghai Univ., Shanghai 200072, China) |
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| Abstract: | Based on the analysis of basis theory and structure of bandgap reference circuit, a precise BiCMOS bandgap voltage reference with low power waste and high power supply rejection ratio（PSRR） is proposed in this paper. The circuit is realized with the 0.6μm 5V CMOS process. The simulation results show that the circuit can work with the source voltage ranged from 1.9V to 6.4V and has a good PSRR of -88dB at low frequency. The temperature coefficient is low to 9.73μm and the output voltage variation is 1.72mV over the temperature range from -25℃ to 150℃. |
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| Keywords: | BiCMOS |
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