Nitride-based green light-emitting diodes with high temperature GaN barrier layers |
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| Authors: | Wu LW Chang SJ Su YK Chuang RW Wen TC Kuo CH Lai WC Chang CS Tsai JM Sheu JK |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan; |
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| Abstract: | High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700/spl deg/C to 950/spl deg/C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good. |
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