High-performance 1.06-/spl mu/m selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells |
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Authors: | HQ Hou KD Choquette KM Geib BE Hammons |
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Affiliation: | Sandia Nat. Labs., Albuquerque, NM, USA; |
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Abstract: | We present the first room-temperature continuous-wave operation of high-performance 1.06-/spl mu/m selectively oxidized vertical-cavity surface-emitting lasers (VCSEL's). The lasers contain strain-compensated InGaAs-GaAsP quantum wells (QW's) in the active region grown by metalorganic vapor phase epitaxy. The threshold current is 190 /spl mu/A for a 2.5/spl times/2.5 /spl mu/m/sup 2/ device, and the threshold voltage is as low as 1.255 V for a 6/spl times/6 /spl mu/m/sup 2/ device. Lasing at a wavelength as long as 1.1 /spl mu/m was also achieved. We discuss the wavelength limit for lasers using the strain-compensated QW's on GaAs substrates. |
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