| 材料热电特性对相变存储器功耗的影响 |
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| 引用本文： | 周俊卿,程秀兰,张衍,单川.材料热电特性对相变存储器功耗的影响[J].功能材料与器件学报,2009,15(6). |
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| 作者姓名： | 周俊卿 程秀兰 张衍 单川 |
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| 作者单位： | 上海交通大学微电子学院,上海,200240 |
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| 摘 要： | 本文建立了相变存储器存储单元的有限元分析模型,对相变材料以及加热电极热电参数对加热效率、功耗的影响进行了研究.模拟研究表明:引入了随温度变化的相变层热导率,能更精确地模拟器件温度场;加热电极电阻率与相变层电阻率越大,加热效率越高,功耗越低;但为了使加热效率更集中在相变材料层中,加热电极电阻率不能大于相变层电阻率.其中,在相变材料设计选择方面,具有较高电阻率的Si_2Sb_2Te_5较传统的Ge_2Sb_2Te_5更适合应用于低功耗相变存储器的应用;而在底部加热电极的选择上,具有较高电阻率和低热导率的TiN较TiW、W或Ti等电极相比,在低功耗方面更具优势.
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| 关 键 词： | 相变存储器 有限元分析 电学性能 热学性能 加热效率 |
Effect of Thermal and Electrical Properties of Materials on the Power Consumption of Phase Change Memory |
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| ZHOU Jun-qing,CHENG Xiu-lan,ZHANG Yan,SHAN Chuan.Effect of Thermal and Electrical Properties of Materials on the Power Consumption of Phase Change Memory[J].Journal of Functional Materials and Devices,2009,15(6). |
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| Authors: | ZHOU Jun-qing CHENG Xiu-lan ZHANG Yan SHAN Chuan |
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| Affiliation: | ZHOU Jun-qing,CHENG Xiu-lan,ZHANG Yan,SHAN ChuanSchool of Microelectronics,Shanghai Jiao Tong University,Shanghai,200240,China |
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| Abstract: | In order to study the influence of thermal and electrical properties of phase change material and heater on heating efficiency and power consumption,a finite element analytical model was established.It is demonstrated by the simulation that a more accurate simulation can be done if introducing the temperature dependent thermal conductivity of phase change layer,and that heating efficiency is improved when increasing the resistivity of heater and phase change layer,and that the resistivity of heater should b... |
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| Keywords: | phase change memory FEA electrical property thermal property heating efficiency |
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