| GaN基肖特基二极管的场板工程 |
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| 引用本文： | 雷勇,石宏彪,陆海,陈敦军,张荣,郑有炓. GaN基肖特基二极管的场板工程[J]. 半导体学报, 2013, 34(5): 054007-8 |
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| 作者姓名： | 雷勇 石宏彪 陆海 陈敦军 张荣 郑有炓 |
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| 作者单位： | Nanjing National Laboratory of Microstructures,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University;School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology |
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| 基金项目： | supported by the State Key Program for Basic Research of China(Nos.2010CB327504,2011CB922100,2011CB301900);the National Natural Science Foundation of China(Nos.60825401,60936004,11104130,60990311,BK2011050) |
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| 摘 要： | The practical design of GaN-based Schottky barrier diodes（SBDs） incorporating a field plate（FP） structure necessitates an understanding of their working mechanism and optimization criteria.In this work,the influences of the parameters of FPs upon breakdown of the diode are investigated in detail and the design rules of FP structures for GaN-based SBDs are presented for a wide scale of material and device parameters.By comparing three representative dielectric materials（SiO2,Si3N4 and Al2O3） selected for fabricating FPs,it is found that the product of dielectric permittivity and critical field strength of a dielectric material could be used as an index to predict its potential performance for FP applications.
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| 关 键 词： | gallium nitride Schottky barrier diode field plate design optimization |
Field plate engineering for GaN-based Schottky barrier diodes |
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| Lei Yong,Shi Hongbiao,Lu Hai,Chen Dunjun,Zhang Rong and Zheng Youdou. Field plate engineering for GaN-based Schottky barrier diodes[J]. Chinese Journal of Semiconductors, 2013, 34(5): 054007-8 |
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| Authors: | Lei Yong Shi Hongbiao Lu Hai Chen Dunjun Zhang Rong Zheng Youdou |
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| Affiliation: | 1. Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
2. Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | The practical design of GaN-based Schottky barrier diodes (SBDs) incorporating a field plate (FP) structure necessitates an understanding of their working mechanism and optimization criteria. In this work, the influences of the parameters of FPs upon breakdown of the diode are investigated in detail and the design rules of FP structures for GaN-based SBDs are presented for a wide scale of material and device parameters. By comparing three representative dielectric materials (SiO2, Si3N4 and Al2O3) selected for fabricating FPs, it is found that the product of dielectric permittivity and critical field strength of a dielectric material could be used as an index to predict its potential performance for FP applications. |
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| Keywords: | gallium nitride Schottky barrier diode field plate design optimization |
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