Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization |
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Authors: | Zhiguo Meng Shuyun Zhao Wu C. Bo Zhang Man Wong Hoi-Sing Kwok |
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Affiliation: | Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China; |
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Abstract: | Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70/spl sim/80 cm/sup 2//V/spl middot/s and 40/spl sim/50 cm/sup 2//V/spl middot/s, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability. |
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