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New generation of highly stable high-temperature microelectromechanical transducers based on a silicon-on-isolator heterostructure
Authors:L. V. Sokolov
Affiliation:1.Research Institute of Aviation Equipment,Zhukovskii,Russia
Abstract:Some aspects are considered for creating a new generation of microelectromechanical transducers based on a silicon-on-isolator heterostructure with a monolithic integral tensoframe based on analyzing physicomechanical problems that restrain an increase in the technical level of semiconductor pressure transducers for information and control systems.
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