A novel trench clustered insulated gate bipolar transistor (TCIGBT) |
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| Authors: | Spulber O Sweet M Vershinin K Ngw CK Ngwendson L Bose JVSC De Souza MM Sanakara Narayanan EM |
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| Affiliation: | Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK; |
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| Abstract: | A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate an improvement of 25% in on state and 28% in the turn-off losses in comparison to the state-of-the-art trench IGBT. The saturation current levels of the TCIGBT, which can be designed independent of the forward drop, are also lower. |
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