L、S波段俘越二极管性能参数的实验研究

在以击穿电压V_b和结电咨C_j(-60)作为器件低频参数的基础上,研究了器件低频参数与高频性能的关系,增添电容比C_r(=C_j(-1)]/C_j(-60)]作为低频参数.实践表明,L、S波段俘越二极管各有相应的C_r最佳范围,凡具有最佳C_r范围的器件有好的俘越振荡性能.本文还介绍了器件C_r与外延材料的杂质浓度N的关系.可据此关系选抒外延材料的杂质浓度N来制造器件,使得80%以上批次的器件部具有好的俘越振荡性能.

The Experimental Research of Performance Parameters of A TRAPATT Diode at L-and S-bands

Based on the breakdown voltage, Vb, and the junction capacitance, Cj ( - 60), and with the ratio of capacitance, Cr=Cj(-1)/ Cj(-60),under consideration, the relationship between the low frequency parameter and the high frequence performance has been studied. It was experimentally demonstrated that the Cr of L-aad S-band TRAPATT diodes had its optimum region, respectively. The performance of TRAPATT oscillation was better as the Cr of the diode was in the optimum region. The relationship between the impurity concentration of the epitaxial layer and Cr was also introduced in this paper. On the basis of this relationship the impurity concentration of the epitaxial layer was chosed in fabrication of the device, resulting in an excellent performance of the TRAPATT oscillator over 80% of all runs.