| 利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量 |
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| 引用本文： | 王雪蓉,魏莉萍,郑会保,刘运传,周燕萍,孟祥艳. 利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量[J]. 激光与光电子学进展, 2012, 0(5): 142-146 |
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| 作者姓名： | 王雪蓉 魏莉萍 郑会保 刘运传 周燕萍 孟祥艳 |
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| 作者单位： | 中国兵器工业集团公司第五三研究所 |
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| 基金项目： | “十一五”化学计量项目资助课题 |
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| 摘 要： | 采用深紫外光致发光技术测量AlxGa1-xN半导体异质外延膜的禁带宽度,结合Material Studio软件中的CASTEP模块模拟计算AlxGa1-xN异质外延膜材料的弯曲因子,测定了AlxGa1-xN外延膜样品中的Al元素物质的量分数。结果表明,发射波长为224.3nm的HeAg激光器能够激发AlxGa1-xN半导体材料产生发光现象。CASTEP软件模拟计算得到AlxGa1-xN的弯曲因子为1.01462±0.06772eV,认为其弯曲因子在1.0eV附近,由此可以理论计算得到具有Al组分梯度的一系列AlxGa1-xN外延膜样品中的Al元素物质的量分数。
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| 关 键 词： | 薄膜 AlGaN外延膜 光致发光 弯曲因子 CASTEP软件 |
Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique |
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| Wang Xuerong Wei Liping Zheng Huibao Liu Yunchuan Zhou Yanping Meng Xiangyan. Al Contents of AlxGa1-xN Epitaxial Films Studied by Photoluminescence Technique[J]. Laser & Optoelectronics Progress, 2012, 0(5): 142-146 |
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| Authors: | Wang Xuerong Wei Liping Zheng Huibao Liu Yunchuan Zhou Yanping Meng Xiangyan |
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| Affiliation: | Wang Xuerong Wei Liping Zheng Huibao Liu Yunchuan Zhou Yanping Meng Xiangyan(Institute 53 of China North Industries Group Corporation,Jinan,Shandong 250031,China) |
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| Abstract: | Deep-ultraviolet photoluminescence technique is used to investigate the band gaps of AlxGa1-xN epitaxial films.The bowing parameter of AlxGa1-xN is studied by CASTEP module of Material Studio simulation software and the Al molar fractions of AlxGa1-xN epitaxial films are researched.The result shows that the HeAg laser with 224.3 nm emission wavelength can make AlxGa1-xN material produce luminescence.The bowing parameter of AlxGa1-xN epitaxial film is calculated with CASTEP software simulation to be 1.01462±0.06772 eV,from which we can calculate the Al molar fractions of AlxGa1-xN epitaxial films. |
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| Keywords: | thin films AlGaN epitaxial film photoluminescence bowing parameter CASTEP software |
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