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Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(1 0 0) substrates |
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| Authors: | F Moura EC Aguiar E Longo JA Varela AZ Simões |
| Affiliation: | a Laboratório Interdisciplinar em Cerâmica, Instituto de Química, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, São Paulo, Brazil b Universidade Estadual Paulista (Unesp) - Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 São Paulo, Brazil c Universidade Federal de Itajubá (Unifei) - Campus Itabira, Rua São Paulo 377, Bairro Amazonas, P.O. Box 355, 35900-37 Itabira, Minas Gerais, Brazil |
| Abstract: | Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 °C for 2 h. The peaks were indexed as cubic phase belonging to the Im−3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. |
| Keywords: | Thin films Dielectrics Chemical synthesis X-ray diffraction |
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