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High-Q microwave dielectrics in the (Mg1−xZnx)Al2O4 (x = 0-0.1) system
Authors:Cheng-Liang Huang  Yu-Hua ChienChen-Yi Tai  Chi-Yuen Huang
Affiliation:a Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
b Department of Resource Engineering, National Cheng Kung University, Tainan, Taiwan
Abstract:The microwave dielectric properties and the microstructures of (Mg1−xZnx)Al2O4 (x = 0-0.1) ceramic system prepared by the conventional solid-state route were investigated. The forming of spinel-structured (Mg1−xZnx)Al2O4 (x = 0-0.1) solid solutions was confirmed by the XRD patterns and the measured lattice parameters, which linearly varied from a = b = c = 8.0815 Å for MgAl2O4 to a = b = c= 8.0828 Å for (Mg0.9Zn0.1)Al2O4. By increasing x, the Q × f of (Mg1−xZnx)Al2O4 can be tremendously boosted from 82,000 GHz at x = 0 to a maximum of 156,000 GHz at x = 0.05. The Zn substitution was effective in reducing the dielectric loss without detrimental effects on the ?r and τf values of the ceramics.
Keywords:Crystal growth  Dielectric response
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