High-Q microwave dielectrics in the (Mg1−xZnx)Al2O4 (x = 0-0.1) system |
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Authors: | Cheng-Liang Huang Yu-Hua ChienChen-Yi Tai Chi-Yuen Huang |
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Affiliation: | a Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan b Department of Resource Engineering, National Cheng Kung University, Tainan, Taiwan |
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Abstract: | The microwave dielectric properties and the microstructures of (Mg1−xZnx)Al2O4 (x = 0-0.1) ceramic system prepared by the conventional solid-state route were investigated. The forming of spinel-structured (Mg1−xZnx)Al2O4 (x = 0-0.1) solid solutions was confirmed by the XRD patterns and the measured lattice parameters, which linearly varied from a = b = c = 8.0815 Å for MgAl2O4 to a = b = c= 8.0828 Å for (Mg0.9Zn0.1)Al2O4. By increasing x, the Q × f of (Mg1−xZnx)Al2O4 can be tremendously boosted from 82,000 GHz at x = 0 to a maximum of 156,000 GHz at x = 0.05. The Zn substitution was effective in reducing the dielectric loss without detrimental effects on the ?r and τf values of the ceramics. |
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Keywords: | Crystal growth Dielectric response |
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