| 化学机械抛光液的研究进展 |
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| 引用本文： | 廉进卫,张大全,高立新.化学机械抛光液的研究进展[J].化学世界,2006,47(9):565-567,576. |
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| 作者姓名： | 廉进卫 张大全 高立新 |
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| 作者单位： | 上海新华化工厂,上海,201703;上海电力学院国家电力公司热力设备腐蚀与防护重点实验室,上海,200090 |
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| 摘 要： | 化学机械抛光(CMP)是唯一能对亚微米级器件提供全局平面化的技术,介绍了化学机械抛光浆料的品种、应用范围、研究进展以及浆料的组成和抛光原理,随着硅单晶片向大尺寸的发展,以及集成电路集成度的提高、线宽的进一步减小,须加强对化学机械抛光液的开发和抛光机理的研究,满足化学机械抛光的技术和工艺要求。
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| 关 键 词： | 化学机械抛光(CMP) 硅片抛光 抛光液 SiO2胶体 |
| 文章编号： | 0367-6358（2006）09-565-03 |
| 收稿时间： | 2006-05-15 |
| 修稿时间： | 2006-05-152006-07-18 |
Development of Chemical Mechanical Polishing Slurry |
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| LIAN Jin-wei,ZHANG Da-quan,GAO Li-xin.Development of Chemical Mechanical Polishing Slurry[J].Chemical World,2006,47(9):565-567,576. |
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| Authors: | LIAN Jin-wei ZHANG Da-quan GAO Li-xin |
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| Affiliation: | 1. Shanghai Xinhua Chemical Factory, Shanghai 201703 ; 2. Department of Environmental Engineering of Shanghai University of Electric Power, Shanghai 200090, China |
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| Abstract: | Chemical mechanical polishing(CMP) is the only technique known to provide global planarization of sub-micron devices.Development of CMP slurry,variety,chemical composing and polishing mechanism are reviewed.Accompanied with enlarging size of silicon wafer,increasing in integration level and decreasing in line width,it should be strengthened on the study of CMP slurry and CMP mechanism. |
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| Keywords: | chemical mechanical polishing(CMP) silicon wafer polishing slurry SiO_2 colloid |
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