氮化铝粉体制备技术的研究进展

氮化铝(AlN)因具备优良的理化性能,目前已被广泛应用于微电子及半导体器件的基板和封装领域中,同时在功率器件、深紫外LED及半导体衬底方面也具有广阔发展前景。AlN粉体作为AlN产品的主要原料是决定其性能的关键因素。在对AlN的结构与性能综合分析基础上,系统介绍了当前AlN粉体制备技术的研究进展和应用现状,同时对各制备工艺的特点进行了分析探讨。指出在微米AlN粉体制备方面,碳热还原法和直接氮化法仍具有明显优势,而化学气相沉积法和等离子体法则在纳米AlN粉体制备方面具有良好的应用前景。获得更高纯度、粒度可控、形貌均匀分散的粉体是AlN制备技术的研究方向。

Research Progress of the Aluminum Nitride Powder Preparation Technology

Aluminum nitride(AlN) has been widely used in the field of substrates and packaging of microelectronics and semiconductor devices due to its excellent physical and chemical properties. And it has broad prospects in power devices, deep ultraviolet LEDs and semiconductor substrates. As the main raw material of AlN products, AlN powder is the key factor in determining its performance. Based on the comprehensive analysis of the structure and properties of AlN, the research progress and application status of the current preparation technology of AlN powder are systematically introduced, and the characteristics of each preparation process are analyzed and discussed. It is pointed out that the carbothermal reduction method and the direct nitridation method still have obvious advantages in the preparation of micron-sized AlN powder, while the chemical vapor deposition method and the plasma method have good application prospects in the preparation of nano-sized AlN powder. The research direction of the AlN preparation technology is to obtain powders with higher purity, controllable particle size and uniformly dispersed morphology.