Single-carrier-type dominated impact ionisation in multilayer structures |
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| Authors: | Blauvelt H Margalit S Yariv A |
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| Affiliation: | California Institute of Technology, Pasadena, USA; |
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| Abstract: | A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers. |
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