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| 基于SCR的ESD器件低触发电压设计 | |
| 引用本文： | 李冰,杨袁渊,董乾. 基于SCR的ESD器件低触发电压设计[J]. 固体电子学研究与进展, 2009, 29(4) |
| 作者姓名： | 李冰 杨袁渊 董乾 |
| 作者单位： | 1. 东南大学集成电路学院,南京,210096;东南大学无锡分校,江苏,无锡,214135 2. 新南威尔士大学电子工程和电信学院,澳大利亚 3. 无锡奥利杰科技有限公司,江苏,无锡,214135 |
| 基金项目： | 国家科技部创新基金项目 |
| 摘 要： | 设计和验证了三种低电压触发的SCR结构ESD保护电路,采用上华0.5μmCMOS工艺流片,测试表明,所有的器件都具有低电压触发特性,在器件宽度只有50μm的条件下,能达到400V正向机器模式的ESD性能。实验中发现了意外失效情况,文章给出了分析。 |
| 关 键 词： | 静电释放 可控硅 低触发电压 |
Low-triggering Voltage Design of SCR-based ESD Protection Circuits |
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| LI Bing,YANG Yuanyuan,DONG Qian. Low-triggering Voltage Design of SCR-based ESD Protection Circuits[J]. Research & Progress of Solid State Electronics, 2009, 29(4) | |
| Authors: | LI Bing YANG Yuanyuan DONG Qian |
| Affiliation: | LI Bing1,4 YANG Yuanyuan2 DONG Qian3(1College of Integrated Circuits,Southeast University,Nanjing,210096,CHN)(2School of Electrical Engineering and Telecommunications,UNSW Australia)(3 Wuxi ORG Microelectronic Co.,Ltd,Wuxi,Jiangsu,214135,CHN)(4Southeast University Wuxi Branch,CHN) |
| Abstract: | Three kinds of low voltage triggered SCR-based ESD protection circuits are proposed and verified in this paper. All the devices are fabricated with 0.5 μm CMOS process in CSMC. The test result indicates that they have low voltage triggering characteristic and can provide 400 V positive Machine Model ESD performance with device width of only 50 μm. Unexpected failure is observed in the experiment and analysis is listed in the paper. |
| Keywords: | ESD SCR low-triggering voltage |
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