Effect of Zn, Sr, and Y Addition on Electrical Properties of PZT Thin Films |
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| Authors: | Abhishek Dalakoti Amit Bandyopadhyay Susmita Bose |
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| Affiliation: | School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164 |
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| Abstract: | We have investigated methods to increase the efficiency of piezoelectric micromachined ultrasonic transducers (pMUTs). pMUTs are driven by a thin piezoelectric layer on a Si membrane. The efficiency of pMUTs can be increased using a film with better ferroelectric properties. We have used Zn, Sr, and Y doping on PZT-based thin films along the morphotropic phase boundary (MPB) composition to increase their piezoelectric properties. The results obtained were then extended to compositions on both sides of the MPB. The sol–gel method was used to prepare precursor solutions, which were then spin coated on a Pt(100)/Ti/SiO2/Si substrate to prepare the PZT thin films. It was found that Zn and Sr together had the most significant effect on the ferroelectric properties in which a saturation polarization of 108 μC/cm2 and remanent polarization of 54 μC/cm2 were achieved. |
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