| 迁移率的低温特性及对场效应管的影响 |
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| 引用本文： | 韩爱民,王玉钧.迁移率的低温特性及对场效应管的影响[J].固体电子学研究与进展,1993,13(2):123-128. |
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| 作者姓名： | 韩爱民 王玉钧 |
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| 作者单位： | 青岛大学 266071
(韩爱民，王玉钧)，青岛大学 266071(王海萍) |
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| 摘 要： | 在低温到室温(T=233,253,273,283,300K)范围内以及强表面电场作用下,测量了硅VV—MOSFET的电学参量(非饱和区电导g,跨导g_m,饱和区漏电压V_(DS),漏电流I_(DS)和跨导g_(ms),发现和以往传统的理论结果有很大差异。考虑到晶格振动和强表面电场对载流子迁移率μ的影响,给出了VV—MOSFET的上述电学参量随有效栅压V_(GE)和温度T变化的函数关系。克服了传统公式只适应于弱表面电场和室温的局限性,得到的理论结果与实验吻合较好。
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| 关 键 词： | VV-MOSFET 迁移率 低温特性 |
Electrical Parameters of MOSFET Under Strong Surface Electric Field and Low Temperature |
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| Han Aimin,Wang Yujun,Wang Haiping.Electrical Parameters of MOSFET Under Strong Surface Electric Field and Low Temperature[J].Research & Progress of Solid State Electronics,1993,13(2):123-128. |
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| Authors: | Han Aimin Wang Yujun Wang Haiping |
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| Abstract: | Electrical parameters (g, gm,VDS,IDS and gms)of silicon VV-MOS FET are measured under strong surface electric field and low temperature. Great differences are discovered as compared with privious formula. Taking into account the effect of the lattice vibration and the strong surface electric field on the surface mobility,the function of the electric parameters with grid voltage and temperature is given theoretically. Electrical parameters of silicon VV-MOSFET are measured under low temperature . The experimental results are in good agreement with the theoretical function. |
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| Keywords: | VV-MOSFET Mobility Temperature Characteristics |
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