从美日之争看微纳米半导体技术的研究与发展

美国与日本在微米半导体和纳米半导体领域的竞争由来已久。1986～1992年日本在微米半导体方面领先于美国,尤其在DRAM领域,NEC、东芝和日立成为世界最强的前三名半导体公司,日本成为世界头号半导体大国。1993年至今美国在亚微米、深亚微米半导体的竞争中战胜了日本,尤其在微处理器、微控制器、标准逻辑器件、闪存、PLD和模拟器件等领域,英特尔成为世界最大的半导体公司,美国再次登上世界半导体市场的头把交椅。近10年,日本在纳米半导体领域向美国挑战,日本在纳米技术的许多方面领先于美国,两国的竞争正处于白热化。

Competition between U.S.A and Japan on the R & D of micro & nano semiconductor technology

The competition of micro & nano semiconductor between U.S.A and Japan has been long-standing. In the year 1986-1992 the microsemiconductor of Japan has led over U.S.A, especially in DRAM domain. NEC, Toshiba and Hitcahi are the three best companies in the world. Japan was the first semiconductor manufacturing country in the world then. In the year 1993-2002 in the sub-micro and deep sub-micro field the U.S.A triumphed over Japan, especially in MPU, MCU, standard logic device, flash memory and analog device domains. Intel became the first semiconductor corporation in the world. The U.S.A became again the first semiconductor manufacturing country in the world. In the recent 10 years Japan has launched a challenge upon the U.S.A in the nanosemiconductor field. Japan has triumpped over U.S.A in many domains of nanotechnology. The competition between the U.S.A and Japan is in a sharp struggle.