| 微测辐射热计阵列结构的制备 |
| |
| 引用本文： | 王利霞. 微测辐射热计阵列结构的制备[J]. 南京邮电学院学报(自然科学版), 2009, 0(5): 54-58 |
| |
| 作者姓名： | 王利霞 |
| |
| 作者单位： | 南京邮电大学理学院,江苏南京210046 |
| |
| 基金项目： | 南京邮电大学校科研基金（NY207029）资助项目;致谢：此研究工作主要在中科院电子所传感技术国家重点实验室完成,对电子所提供的仪器设备和技术支持表示谢意,同时感谢李建平研究员、何秀丽博士和高晓光博士的的指导和帮助! |
| |
| 摘 要： | 为了研究和优化二氧化钒（VO2）微测辐射热计的制备工艺,采用微电子机械系统（MEMS）体硅工艺制备了VO2微测辐射热计,经过研究和改进制备工艺,制得的微测辐射热计结构稳定,成品率高;经测试及计算,其响应率可达34.3kV/W,探测率为1.2×10^8cm.Hz1/2/W,响应时间约为65.3ms。此器件性能达到国内外同类器件水平。
|
| 关 键 词： | 二氧化钒 微测辐射热计 MEMS |
Preparation of VO2 Microbolometer Array |
| |
| WANG Li-xia. Preparation of VO2 Microbolometer Array[J]. Journal of Nanjing University of Posts and Telecommunications(Natural Science), 2009, 0(5): 54-58 |
| |
| Authors: | WANG Li-xia |
| |
| Affiliation: | WANG Li-xia ( College of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China) |
| |
| Abstract: | In order to study and optimize the preparation process of VO2 microbolometer, the micro electromechanical system （MEMS） bulk-silicon process is employed to fabricate the VO2 microbolometer. After studying and improving the preparation process, the prepared microbolometer behaves steady structure and high yield. The responsivity, detectivity and thermal time constant of the microbolometers are measured and calculated. The results indicate that the responsivity is 34.3kV/W, the detectivity is 1.2×10^8cm.Hz1/2/W, and thermal time constant is -65.3 ms. These results achieve at the same level of similar devices at home and abroad. |
| |
| Keywords: | vanadium dioxide mierobolometer MEMS |
| 本文献已被 维普 等数据库收录！ |
|
