| 2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs |
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| 作者姓名： | Ji Feng Xu Jingping Lai P T Chen Weibing Li Yanping |
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| 作者单位： | 华中科技大学电子科学与技术系，武汉 430074;华中科技大学电子科学与技术系，武汉 430074;香港大学电机与电子工程系，香港;华中科技大学电子科学与技术系，武汉 430074;华中科技大学电子科学与技术系，武汉 430074 |
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| 摘 要： | 给出包括栅电介质与耗尽层区域的边界条件和二维沟道电势分布.根据这个电势分布,得出高k栅介质MOSFET的阈值电压模型,模型中考虑短沟道效应和高k栅介质的边缘场效应.模型模拟结果和实验结果能够很好地符合.通过和一个准二维模型的结果相比较,表明该模型更准确.另外,还详细讨论了影响高k栅电介质MOSFET阈值电压的一些因素.
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| 关 键 词： | 高k栅介质 MOSFET 阈值电压 边缘场 短沟效应 high-k gate dielectric MOSFET threshold voltage fringing field short-channel effect 栅介质 MOSFETs 二维阈值电压模型 Factors threshold behavior accurate drain experimental data model effects Based potential distribution gate dielectric material depletion region boundary conditions channel 因素 |
| 文章编号： | 0253-4177(2006)10-1725-07 |
| 收稿时间： | 3/10/2006 2:58:39 PM |
| 修稿时间： | 05 24 2006 12:00AM |
2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs |
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| Ji Feng,Xu Jingping,Lai P T,Chen Weibing,Li Yanping.2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs[J].Chinese Journal of Semiconductors,2006,27(10):1725-1731. |
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| Authors: | Ji Feng Xu Jingping Lai P T Chen Weibing and Li Yanping |
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| Affiliation: | Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electrical & Electronic Engineering,University of Hong Kong,Hong Kong,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China |
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| Abstract: | New boundary conditions and a 2D potential distribution along the channel of a high-k gate-dielectric MOSFET,including both the gate dielectric material region and the depletion region,are given.Based on this distribution,a 2D threshold-voltage model with the fringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET.The model agrees well with experimental data and a quasi 2D model,and is even more accurate than the quasi 2D model at higher drain voltages.Factors affecting the threshold behavior of the high-k gate-dielectric MOSFET are discussed in detail. |
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| Keywords: | high-k gate dielectric MOSFET threshold voltage fringing field short-channel effect |
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