| 溅射法生长 MgxZn1- xO薄膜的结构和光学特性 |
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| 引用本文： | 张锡健,马洪磊,王卿璞,马瑾,宗福建,肖洪地,计峰,王翠英. 溅射法生长 MgxZn1- xO薄膜的结构和光学特性[J]. 功能材料与器件学报, 2005, 11(1): 11-14 |
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| 作者姓名： | 张锡健 马洪磊 王卿璞 马瑾 宗福建 肖洪地 计峰 王翠英 |
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| 作者单位： | 山东大学物理与微电子学院,济南,250100;泰山医学院,泰安,271000 |
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| 基金项目： | 教育部博士点基金项目(项目编号:20020422056) |
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| 摘 要： | 用射频磁控溅射法在不同衬底上制备出了MgxZn1-xO薄膜。X射线衍射(XRD)和原子力显微镜(AFM)研究结果表明，薄膜为六角纤锌矿结构，具有(002)方向择优取向；随氧分压增加，(002)衍射峰的角度变大，表征薄膜表面粗糙程度的方均根粗糙度减小。室温光致发光谱中有多个紫外及可见光致发光峰，其中344nm发光峰应来源于近带边发射。室温透射谱表明薄膜在可见光区具有极高的透过率，薄膜的吸收边位于340nm附近，进而估算出Mg、Zn1-xO薄膜的带隙宽度为3．59eV，与光致发光结果一致。
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| 关 键 词： | MgxZn1-xO薄膜 射频磁控溅射 光致发光 |
| 文章编号： | 1007-4252(2005)01-0011-04 |
| 修稿时间： | 2004-06-07 |
Structural and optical properties of MgxZn1- xO films deposited by radio frequency magnetron sputtering |
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| ZHANG Xi-jian,MA Hong-lei,WANG Qing-pu,MA Jin,ZONG Fu-jian,XIAO Hong-di,JI Feng,WANG Cui-ying. Structural and optical properties of MgxZn1- xO films deposited by radio frequency magnetron sputtering[J]. Journal of Functional Materials and Devices, 2005, 11(1): 11-14 |
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| Authors: | ZHANG Xi-jian MA Hong-lei WANG Qing-pu MA Jin ZONG Fu-jian XIAO Hong-di JI Feng WANG Cui-ying |
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| Affiliation: | ZHANG Xi-jian1,MA Hong-lei1,WANG Qing-pu1,MA Jin1,ZONG Fu-jian1,XIAO Hong-di1,JI Feng1,WANG Cui-ying2 |
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| Abstract: | High quality MgxZn1-xO films were prepared by radio frequency magnetron sputtering ondifferent substrates. The structure and morphologies of the films were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that MgxZn1-xO films are hexagonal wurtzite structure, and they have a preferred orientation with the c axis perpendicular to the substrate. With the increasing of oxygen partial pressure, angle of (002) diffraction peak becomes larger and surface RMS of the films reduces. There are several UV and visible peaks in photoluminescence spectra,and 344nm luminescence is originated from band gap emission. The films have high transmittance invisible region, and the absorption edge of the films locates at 340nm. In addition, the band gap of MgxZn1-xO films are estimated as 3.59eV. |
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| Keywords: | Mg_xZn_(1-x)O films radio frequency magnetron sputtering photoluminescence |
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