表面预处理对InSb钝化层界面的影响

本文介绍了采用不同的方法对InSb表面进行表面预处理,来改善InSb钝化膜层的电学性能。通过对InSb MIS结构进行C-V测试来评价不同方法预处理制备的钝化结构的电学特性。结果表明等离子预处理能明显改善InSb衬底和钝化层之间的界面性能,尤其是选用N2O等离子预处理InSb衬底表面,在控制界面陷阱和减少钝化层固定电荷方面,效果更明显,有利于提高InSb红外器件的可靠性。

Effect of pretreatment on interface between the passivation layer and InSb substrate

In order to improve electrical properties of the interface between the passivation layer and InSb substrate,different surface pretreatments are used.Through the C-V testing for InSb MIS structure,electrical characteristics of passivation structures produced by different surface pretreatments were evaluated.The results show that the plasma pretreatment can significantly improve the interface between the passivation layer and InSb substrate,especially N2O plasma can control interface traps and reduce the fixed charges.It is obvious to help to improve the reliability of InSb IR devices.