| Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys |
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| 引用本文： | 刘学锋,李建平,孙殿照. Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys[J]. 稀有金属(英文版), 1997, 0(2) |
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| 作者姓名： | 刘学锋 李建平 孙殿照 |
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| 作者单位： | Liu Xuefeng e mail: xfliu @ red. semi. ac. cn，Li Jianping and Sun DianzhaoMaterial Science Center，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，P.R. China |
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| 摘 要： | ＧａｓＳｏｕｒｃｅＭｏｌｅｃｕｌａｒＢｅａｍＥｐｉｔａｘｙＧｒｏｗｔｈｏｆＳｉ１－ｘＧｅｘ／ＳｉＡｌｏｙｓＬｉｕＸｕｅｆｅｎｇ，ＬｉＪｉａｎｐｉｎｇａｎｄＳｕｎＤｉａｎｚｈａｏ（刘学锋）（李建平）（孙殿照）ＭａｔｅｒｉａｌＳｃｉｅｎｃｅＣｅｎｔｅｒ...
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Gas Source Molecular Beam Epitaxy Growth of Si 1- x Ge x /Si Alloys |
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| Liu Xuefeng e mail: xfliu @ red. semi. ac. cn,Li Jianping and Sun DianzhaoMaterial Science Center. Gas Source Molecular Beam Epitaxy Growth of Si 1- x Ge x /Si Alloys[J]. Rare Metals, 1997, 0(2) |
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| Authors: | Liu Xuefeng e mail: xfliu @ red. semi. ac. cn Li Jianping Sun DianzhaoMaterial Science Center |
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| Affiliation: | Liu Xuefeng e mail: xfliu @ red. semi. ac. cn,Li Jianping and Sun DianzhaoMaterial Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.R. China |
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| Abstract: | Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4 2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and SiGe epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth. |
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| Keywords: | SiGe alloys GSMBE Commensurate growth Lattice mismatch |
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