新型绝热微环谐腔型低功耗硅基调制器的设计

为了改进绝热微环谐腔型的结构、降低谐振腔腔体损耗,采用了基于绝热过渡曲线的设计方法,提出了新型载流子注入/抽取结构,进行了理论分析和实验验证,取得了绝热微环谐振腔的谐振峰线宽、消光比及频率响应参量数据,比较了其与传统微环谐振腔的损耗.结果表明,使用所设计的外半径为2m的谐振腔的谐振峰线宽仅为普通微环谐振腔的29.5%,消光比为13.5dB,电阻电容限制带宽提高了4倍,10Gbit/s调制速率下能耗仅为5.1fJ/bit.这一结果大幅改善了绝热微环谐振腔的频率响应特性,降低了功耗.对腔形和载流子注入/抽取结构的研究可以进一步改善绝热微环谐振腔的性能,推动低能耗器件研究的发展.

Design of new type adiabatic micro-ring harmonic cavity low-power silicon modulator

For the purpose of improving the structure of adiabatic micro-ring resonator and reducing the resonator cavity loss, a new carrier injection/extraction structure was proposed based on adiabatic transition curve. After theoretical analysis and experimental verification, the data of resonant full wave at half maximum(FWHM) of the adiabatic micro-ring resonator, extinction ratio and frequency response parameters were obtained and compared with the loss of a traditional micro-ring resonator. The results show that FWHM of the adiabatic ring with outer radius of 2m is only 29.5% of that of a traditional micro-ring, the constrained bandwidth of resistance and capacitance increases 4 times, extinction ratio is 13.5dB and energy consumption is 5.1fJ/bit under modulation speed of 10Gbit/s. This research is helpful to improve the frequency response and reduce the power consumption of an adiabatic micro-ring resonator significantly. The study on adiabatic transition and carrier injection/extraction structure can further improve the performance of the adiabatic micro-ring, and push the development of low energy consumption research.