Texture and Fracture Toughness Anisotropy in Silicon Carbide

Quantitative texture analysis, which included calculation of the orientation distribution function, was used to demonstrate textures in hot-pressed and subsequently annealed silicon carbide (SiC). The results indicated that the hot pressing and annealing could produce strong textures in SiC. Grain rotation during hot pressing and preferred grain growth of plate-shaped α-SiC grains during annealing both apparently contributed to texture development in the SiC materials. The {111} pole figure in hot-pressed material (mostly ß-SiC) and the (004) pole figure in annealed material (mostly α-SiC) were consistent with the microstructural observations. The fracture toughness of hot-pressed and annealed material measured parallel to the hot-pressing direction (5.7 MPam^1/2) was higher than that measured perpendicular to the hot-pressing direction (4.4 MPam^1/2), because of the texture and the microstructural anisotropy.