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| 0．13μm GGNMOS管的ESD特性研究 | |
| 引用本文： | 郭斌,王东,姜玉稀.0．13μm GGNMOS管的ESD特性研究[J].电子与封装,2009,9(12):11-16. |
| 作者姓名： | 郭斌 王东 姜玉稀 |
| 作者单位： | 1. 山西稷山广播电视发展中心,山西稷山,043200 2. 巴州电力公司塔什店火电厂,四川,巴中,636600 3. 上海大学,上海,200000 |
| 摘 要： | 当ESD事件发生时，栅极接地NMOS晶体管是很容易被静电所击穿的。NMOS器件的ESD保护机理主要是利用该晶体管的骤回特性。文章对NMOS管的骤回特性进行了详细研究，利用特殊设计的GGNMOS管实现ESD保护器件。文章基于0．13μm硅化物CMOS工艺，设计并制作了各种具有不同版图参数和不同版图布局的栅极接地NMOS晶体管，通过TLP测试获得了实验结果，并对结果进行了。分析比较，详细讨论了栅极接地NMOS晶体管器件的版图参数和版图布局对其骤回特性的影响。通过这些试验结果，设计者可以预先估计GGNMOS在大ESD电流情况下的行为特性。 |
| 关 键 词： | 静电泄放（ESD） 栅极接地NMOS（GGNMOS） 骤回特性 |
The ESD Characteristics Research of 0.13 m GGNMOS |
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| GUO Bin,WANG Dong,JIANG Yu-xi.The ESD Characteristics Research of 0.13 m GGNMOS[J].Electronics & Packaging,2009,9(12):11-16. | |
| Authors: | GUO Bin WANG Dong JIANG Yu-xi |
| Affiliation: | GUO Bin,WANG Dong,JIANG Yu-xi (1.Radio and Television Development Center,Jishan Shanxi 043200,China,2.Tashidian Power Plant of Bazhou power state,Bazhong 636600,3. Shanghai University,Shanghai 200000,China) |
| Abstract: | GGNMOS transistor is the most easy breakdown devise when ESD is happened. It’s ESD protection mechanism based on their snapback characteristics, so it is necessary to analysis their snapback characteristics to design a GGNMOS device suitable for ESD. In this paper, the snapback characteristics of many gate-grounded NMOS( GGNMOS) devices with different device dimensions and layout floorplan have been discussed based on 0.13μm technics. The results have been obtained from TLP test. Through analyzed the relations between snapback parameters and layout parameters have shown. From these results, the circuit designer can predict the behaviors of the GGNMOS devices under high ESD current stress. |
| Keywords: | electro-static discharg(eESD) gate-grounded nmos snapback characteristics |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |