| Al_2O_3/AlGaN/GaN MOSH结构的制备和性能研究 |
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| 引用本文： | 王水力,朱俊,郝兰众,张鹰. Al_2O_3/AlGaN/GaN MOSH结构的制备和性能研究[J]. 压电与声光, 2011, 33(4) |
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| 作者姓名： | 王水力 朱俊 郝兰众 张鹰 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 国家重点基础研究发展计划(“九七三”计划)基金资助项目(61363) |
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| 摘 要： | 采用激光脉冲沉积法(PLD)在AlGaN/GaN半导体异质结构衬底上沉积Al2O3栅介质层,并对该异质结构的电学性能进行研究。结果表明,Al2O3栅介质层改善了异质结构的界面质量,增强了器件结构的抗击穿电场强度。研究了沉积氧分压对异质结构性能的影响,电流-电压(I-V)测试结果表明,适当氧分压(0.1 Pa)有利于降低栅漏电流。Hall测量和电容-电压(C-V)模拟结果表明,不同的氧分压会改变Al2O3/AlGaN界面处的正电荷密度,从而改变半导体内的二维电子气(2DEG)密度。
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| 关 键 词： | AlGaN/GaN 激光脉冲沉积法(PLD) Al2O3 C-V模拟 二维电子气 |
Fabrication and Properties of Al_2O_3/AlGaN/GaN MOSH Structure |
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| WANG Shuili,ZHU Jun,HAO Lanzhong,ZHANG Ying. Fabrication and Properties of Al_2O_3/AlGaN/GaN MOSH Structure[J]. Piezoelectrics & Acoustooptics, 2011, 33(4) |
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| Authors: | WANG Shuili ZHU Jun HAO Lanzhong ZHANG Ying |
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| Affiliation: | WANG Shuili,ZHU Jun,HAO Lanzhong,ZHANG Ying (State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | The Al2O3 gate dielectric layer was deposited on the heteroepitaxial AlGaN/GaN semiconductor template by using the pulsed laser deposition(PLD) method and its electrical properties were investigated.The results showed that the introduction of Al2O3 gate dielectric improved greatly the interface of the Al2O3/AlGaN and enhanced the break-down field of the device.The effect of the deposition oxygen pressure on the performance of the hetero-structure was studied.The I-V measurement showed that it is helpful to ... |
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| Keywords: | AlGaN/GaN PLD Al2O3 C-V simulation two dimensional electron gas |
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