| INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al_xGa_(1-x)As DBD USING TUNNELING SPECTROSCOPY |
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| 作者姓名： | 陈弘毅 K.L.Wang |
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| 作者单位： | Institute of Microelectronies Tsinghua University，Beijing，100084，Device Research Laboratory，Electrical Engineering Department，University of California at Los Angeles，Los Angeles，CA.90024，U.S.A |
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| 摘 要： | Experimental investigation on resonant tunneling in various GaAs/Al_xGa_(1-x)Asdouble barrier single well structures has been performed by using tunneling spectroscopy atdifferent temperatures.The results show that in addition to resonant tunneling via GaAs wellstate confined by Al_xGa_(1-x)As Γ-point barrier there exists resonant tunneling via GaAs well stateconfined by Al_xGa_(1-x)As X-point barrier for both indirect(x>0.4)and direct(x<0.4)cases.
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INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al_xGa_(1-x)As DBD USING TUNNELING SPECTROSCOPY |
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| Chen Hongyi.INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al_xGa_(1-x)As DBD USING TUNNELING SPECTROSCOPY[J].Journal of Electronics,1990(1). |
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| Authors: | Chen Hongyi |
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| Abstract: | |
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| Keywords: | Resonant tunneling Quantum well Energy band profile |
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