硅基发光材料和器件研究的进展

发光器件和集成电路都是信息技术的基础。如果能将它们集成在一个芯片上，信息传输速度，储存和处理能力将得到大大提高，它将使信息技术发展到一个全新的阶段，但是，现在的集成电路是采用硅材料，而发光器件则用ｉｌｌ－Ｖ族化合物半导体。Ｉｌｌ－Ｖ族化合物半导体集成电路，虽然经过多年的研制，但至今还不成熟。因此，研究硅基发光材料和器件成为发展光电子集成的关键。本文评述了目前取得较大进展的几种主要硅基发光材料和器件的研究，包括掺铒硅、多孔硅、纳米硅以及 Ｓｉ／ＳｉＯ_２等超晶格结构材料，并展望了这些不同硅基发光材料和发光器件在光电集成中的发展前景。

Progress of Silicon Based Light-Emitting Materials and Devices

Silicon based light-emitting material and device are key for optoelectronic integration. Recently there has been significant progress in materials engineering methods. This paper reviews the latest developments in this work including erbium doped silicon, porous silicon, nanocrystalline silicon, and Si/SiO-2 et al. superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed.