Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications |
| |
| Authors: | D B Bushnell N J Ekins-Daukes K W J Barnham J P Connolly J S Roberts G Hill R Airey M Mazzer |
| |
| Affiliation: | a Experimental Solid State Physics, Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BW, UK;b EPSRC III-V Facility, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK;c IME-CNR, University of Lecce, Lecce, Italy |
| |
| Abstract: | GaInP/GaAs tandem cells are limited by the current generated in the bottom GaAs junction. Strain-balanced multi-quantum well (MQW) solar cells offer a way of achieving a lower band gap for the lower junction, whilst retaining the lattice parameter of GaAs, and avoiding non-radiative recombination through dislocations. Further, the addition of a distributed Bragg reflector (DBR) allows the possibility of light not absorbed by the wells being reflected back into the structure, whilst allowing sub-well band-gap light through to a third Ge junction. Experimental results are presented from MQW cells grown with and without DBRs. These show a higher internal quantum efficiency in the 880 nm–1 μm region without detriment to the bulk response, when compared to MQW cells without DBRs. |
| |
| Keywords: | Multi-quantum well (MQW) Distributed Bragg reflector (DBR) Strain balance InGaAs GaAsP |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
