High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors |
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| Authors: | Enquist P.M. Hutchby J.A. Chang M.F. Asbeck P.M. Sheng N.H. Higgins J.A. |
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| Affiliation: | Research Triangle Inst., Research Triangle Park, NC, USA; |
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| Abstract: | Base doping densities near 10/sup 20/ cm/sup -3/ and emitter doping densities near 7*10/sup 17/ cm/sup -3/ have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in f/sub max/=94 GHz and f/sub t/=45 GHz. To the authors' knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.<> |
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