端面抽运矩形截面Nd∶GdVO_4晶体热效应研究

以解析分析理论为基础,研究矩形横截面Nd∶GdVO4晶体受到具有高斯分布的端面中心入射时,激光晶体温度场分布情况和晶体抽运面热形变分布情况。通过对半导体激光端面入射Nd∶GdVO4激光晶体工作特点分析,建立了符合激光晶体工作状态的热模型,利用热传导方程(泊松方程)的一种新求解方法,得出了矩形截面Nd∶GdVO4晶体的温度场分布和端面热形变场通解表达式,同时对影响激光晶体温度场分布的各种因素进行了定量研究。研究结果表明,当使用输出功率为15W的半导体激光器端面中心入射Nd∶GdVO4晶体(晶体掺钕离子原子数分数为1.2%)时,在抽运端面中心获得189.0℃最高温升和1.37μm最大热形变量。这种方法还可以应用到其他激光晶体热问题研究中。

Thermal Effect Research of End-pumped Rectangle Nd∶GdVO4 Crystals

Temperature field and pump-face thermal distortion field of a rectangle Nd∶GdVO4 crystal end-pumped by the diode laser with Gauss mode was researched by the analytical theory. Through work characteristic analysis of Nd∶GdVO4 crystal by a diode laser end-pumped, a thermal model was built according to the actual working state. A new solution of the heat conduct equation was introduced, and the general solution of temperature field and pump-face thermal distortion field of rectangle Nd∶GdVO4 crystal were obtained. Some relevant parameters, which would influence temperature field distribution, were analyzed simultaneously. The result shows that when the output power of diode laser is 15 W, the pump-face centre of 1.2 at.-% neodymium-doped Nd∶GdVO4 crystal can get 189 ℃ maximal temperature rise and has 1.37 μm thermal distortion. The method can also be applied to analyze thermal problems of other laser crystals.