| 短波HgCdTe光电二极管中缺陷能级对器件性能的影响 |
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| 引用本文： | 胡新文,张胜坤.短波HgCdTe光电二极管中缺陷能级对器件性能的影响[J].红外与毫米波学报,1999,18(2):108-112. |
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| 作者姓名： | 胡新文 张胜坤 |
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| 作者单位： | [1]中国科学院上海技术物理研究所传感技术国家重点实验室 [2]复旦大学应用表面物理国家重点实 |
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| 摘 要： | 利用变频导纳谱研究了Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．６）ｎ＾＋－ｏｎ－ｐ结中的深能级缺陷，得到其缺陷能级位置在价带上０．１５ｅＶ，同时给出了其俘获截面和缺陷密度，初步认为是Ｈｇ空位或与其相关的复合缺陷。根据深能级的有关参数，估算了器件的少子寿命和器件优值参数Ｒ０Ａ。
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| 关 键 词： | 导纳谱 缺陷能级 汞镉碲 光电二极管 红外器件 |
THE INFLUNECE OF DEFECT LEVELS ON THE DEVICE PERFORMANCE IN SHORT WAVELENGTH Hg 1 x Cd x Te PHOTODIODES |
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| HU Xin,Wen,LI Xiang,Yang,WANG Qin,LU Hui,Qin,ZHAO Jun,FANG Jia,Xiong.THE INFLUNECE OF DEFECT LEVELS ON THE DEVICE PERFORMANCE IN SHORT WAVELENGTH Hg 1 x Cd x Te PHOTODIODES[J].Journal of Infrared and Millimeter Waves,1999,18(2):108-112. |
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| Authors: | HU Xin Wen LI Xiang Yang WANG Qin LU Hui Qin ZHAO Jun FANG Jia Xiong |
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| Abstract: | The defect levels in Hg 1 x Cd x Te( x =0.6)n on p junction photodiodes were studied by using the admittance spectroscopy. Measurements identified a hole trap located at 0.15eV above the valence band. The trap density and majority carrier capture cross section were given, with results suggecting hole capture at a neutral trapping center. It was estimated as a Hg vacancy or some composite defects related with it. The minority lifetime of the devices and the product R 0A of area times the dynamic resistance at zero bias were calculated and the results were discussed, too. |
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| Keywords: | admittance spectra defect levels Hg 1 x Cd x Te |
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