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烧结温度对WO_3系电容-压敏复合陶瓷电性能的影响(英文)
引用本文:王天国,邵刚勤,李喜宝,张文俊. 烧结温度对WO_3系电容-压敏复合陶瓷电性能的影响(英文)[J]. 稀有金属材料与工程, 2009, 38(Z2)
作者姓名:王天国  邵刚勤  李喜宝  张文俊
作者单位:武汉理工大学,材料复合新技术国家重点实验室,湖北,武汉,430070
基金项目:National Science Development Foundation of China (No.2008-80)
摘    要:研究了烧结温度对WO_3系电容-压敏复合陶瓷显微结构、非线性电学性能及介电性能的影响.随着烧结温度从1050 ℃到1200 ℃的升高,WO_3陶瓷的晶粒尺寸增大,压敏电压随之降低.在1150 ℃烧结条件下,掺杂0.8 mol% Y_2O_3 的WO_3 压敏陶瓷样品表现出优良的综合电性能,其非线性系数为3.5,相对介电常数为1.13×10~4.然而,过高的烧结温度,不利于样品的非线性电学性能.WO_3系电容-压敏复合陶瓷较适合的烧结温度为1150 ℃,这是因为,在此温度下最有利于样品的晶界势垒结构的形成.

关 键 词:电容  非线性系数  电学性能  烧结温度  复合陶瓷  压敏电压  介电性能  

Effect of Sintering Temperature on Electrical Properties of WO_3-Based Capacitor-Varistor Ceramics
Wang Tianguo,Shao Gangqin,Li Xibao,Zhang Wenjun. Effect of Sintering Temperature on Electrical Properties of WO_3-Based Capacitor-Varistor Ceramics[J]. Rare Metal Materials and Engineering, 2009, 38(Z2)
Authors:Wang Tianguo  Shao Gangqin  Li Xibao  Zhang Wenjun
Affiliation:Wang Tianguo,Shao Gangqin,Li Xibao,Zhang Wenjun (State Key Laboratory of Advanced Technology for Materials Synthesis & Processing,Wuhan University of Technology,Wuhan 430070,China)
Abstract:The effect of sintering temperature on the microstructure, nonlinear electrical behavior, and dielectric properties of the Y_2O_3-doped WO_3 ceramics was studied. The decrease in breakdown voltage directly relates to the grain growth of WO_3 grains when increasing the sintering temperatures from 1050 to 1200 ℃. The capacitor-varistor of WO_3- 0.8 mol% Y_2O_3 composite sintered at 1150 ℃ exhibits the maximal nonlinear coefficient of 3.5 and the highest dielectric constant of 1.13 × 10~4. However, higher sintering temperature than 1150 ℃ is not favorable for the nonlinear electrical behavior of the WO_3 ceramics. The best nonlinear properties of the samples sintered at 1150 ℃ can be explained by the most efficient boundary barrier layer with can be formed sintered at the proper temperature.
Keywords:varistors  sintering temperature  tungsten trioxide  electrical properties
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