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半导体ZnS:Co的电子结构与磁性研究
引用本文:房文健,刘永生,方 津,彭 麟,郭保智,高 湉. 半导体ZnS:Co的电子结构与磁性研究[J]. 稀有金属材料与工程, 2014, 43(7): 1676-1680
作者姓名:房文健  刘永生  方 津  彭 麟  郭保智  高 湉
作者单位:上海电力学院太阳能研究所,上海 200090
基金项目:国家自然科学基金 (10804072);上海市青年科技启明星计划(跟踪) (11QH1401000);教育部科学技术研究重点项目 (211055);上海市科委重点项目(12JC1404400, 11160500700);上海市教育委员会科研创新项目 (11ZZ168)
摘    要:采用基于密度泛函理论的第一性原理方法,研究了闪锌矿结构Co掺杂ZnS体系的电子结构和磁性。通过计算掺杂后组态的几何参数、形成能、磁矩、电子态密度以及电荷密度,发现单个Co原子掺杂,替换超晶胞(2×2×2)中心的Zn原子后体系形成能小于0,可以实现掺杂,且在费米能级处出现自旋极化现象,体系具有半金属特性。通过对2个Co原子的掺杂情况的计算,发现Co-S-Co反铁磁耦合、Co-S-Zn-S-Co铁磁耦合时体系最稳定,同时解释了Co掺杂ZnS体系的铁磁性产生机理。

关 键 词:稀磁半导体  第一性原理  Co掺杂ZnS
收稿时间:2013-07-15

Electronic Structure and Magnetic Properties of Co-Doped ZnS with Zinc Blende Structure
Fang Wenjian,Liu Yongsheng,Fang Jin,Peng Lin,Guo Baozhi and Gao Tian. Electronic Structure and Magnetic Properties of Co-Doped ZnS with Zinc Blende Structure[J]. Rare Metal Materials and Engineering, 2014, 43(7): 1676-1680
Authors:Fang Wenjian  Liu Yongsheng  Fang Jin  Peng Lin  Guo Baozhi  Gao Tian
Affiliation:Institute of Solar Energy, Shanghai University of Electric Power, Shanghai 200090, China
Abstract:The electronic structure and magnetic properties of Co-doped ZnS (zinc blende) were studied with the first-principle method using PW91 within the generalized gradient approximation (GGA) for exchange-correlation. Geometric parameters, formation energies, magnetic moments, density of states, and electron charge densities were investigated. It is found that the formation energy is less than 0 as one Co atom is doped into the middle of the super cell (2×2×2), which indicates that this structure is stable for Co-doping. And the density of states (DOS) near to the Fermi leVel (EF) indicates the presence of a half-metallic character which is caused by p-d hybridization between the Co 3d and S 3p. When two Co atoms are doped into the ZnS (zinc blende), antiferromagnetic (AFM) state is the most stable configuration in the system of Co-S-Co. But in the case of Co-S-Zn-S-Co, the most stable configuration is ferromagnetic (FM) state
Keywords:diluted magnetic semiconductors (DSM)   first-principles   Co doped ZnS
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