Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes |
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| Authors: | R. Mantovan S. VangelistaB. Kutrzeba-Kotowska S. CoccoA. Lamperti G. TallaridaD. Mameli M. Fanciulli |
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| Affiliation: | a Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italyb Dipartimento di Scienze Chimiche, Università di Cagliari, Cittadella Universitaria, 09042 Monserrato, Cagliari, Italyc Dipartimento di Scienza dei Materiali, Università degli studi Milano-Bicocca, Via R Cozzi 53, 20125 Milano, Italy |
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| Abstract: | Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions. |
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| Keywords: | Magnetic tunnel junctions Atomic layer deposition Chemical vapor deposition Thin films Tunnel magnetoresistance |
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