Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films |
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| Authors: | Nanke JiangDaniel G. Georgiev Ting WenAhalapitiya H. Jayatissa |
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| Affiliation: | a Department of Electrical Engineering and Computer Science, Mail Stop 308, University of Toledo, Toledo, OH 43606, USAb Department of Mechanical, Industrial, and Manufacturing Engineering, Mail Stop 312, University of Toledo, Toledo, OH 43606, USA |
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| Abstract: | Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N2-Ar or N2-Ar-O2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of ~ 1019 cm−3, mobility of ~ 101 cm2/Vs, resistivity of ~ 10−2 Ω ∗ cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap. |
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| Keywords: | Zinc nitride Zinc oxynitride Reactive radio-frequency sputtering X-ray diffraction Scanning electron microscopy Electron diffraction spectroscopy Raman spectroscopy Hall effect measurements |
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