High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection |
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| Authors: | Erfu Liu Mingsheng Long Junwen Zeng Wei Luo Yaojia Wang Yiming Pan Wei Zhou Baigeng Wang Weida Hu Zhenhua Ni Yumeng You Xueao Zhang Shiqiao Qin Yi Shi Kenji Watanabe Takashi Taniguchi Hongtao Yuan Harold Y Hwang Yi Cui Feng Miao Dingyu Xing |
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| Affiliation: | 1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P.R. China;2. College of Science, National University of Defense Technology, Changsha, P.R. China;3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, P.R. China;4. Department of Physics, Southeast University, Nanjing, P.R. China;5. Department of Chemistry, Southeast University, Nanjing, P.R. China;6. School of Electronic Science and Engineering, Nanjing University, Nanjing, P.R. China;7. National Institute for Materials Science, Tsukuba, Japan;8. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA;9. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA |
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| Abstract: | 2D transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light–matter interactions. To fully explore their potential in photoconductive detectors, high responsivity is required. Here, high responsivity phototransistors based on few‐layer rhenium disulfide (ReS2) are presented. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88 600 A W?1, which is a record value compared to other individual 2D materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few‐layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications. |
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| Keywords: | 2D material high responsivity photodetector ReSa |
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